ADD：
West Floor 3, Building 1, Anji Chair Art Incubation Park,
Kangsheng Avenue, Anji County, Zhejiang Province, China
HJT Tech
HJT, a next generation PV cell technology, has potential for higher power generation efficiency, clear technology development route, and also comply with the law of PV industry development. Based on the analysis and judgment of technology and market trends, Dasun focuses on the development of HJT PV cell and module.
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01
Short Process flow
HJT cell process mainly includes four steps: pile making, amorphous silicon deposition, TCO deposition, screen printing, which is far less than PERC and TOPCon cells.
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02
LID Free
The substrate of HJT cell is usually phosphorus-doped N-type mono silicon, and it is immune to LID effect without boron/oxygen recombination or boron-iron recombination.
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03
Good Weak-light Response
N-type mono silicon is used in HJT cells, and the power generation performance of N-type is 1% to 2% higher than that of P-type under the irradiation intensity of 600W/m2.
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04
High Conversion Efficiency
At present, the mass production efficiency of HJT is generally above 24%. The conversion efficiency of superposed IBC and PVK can be increased to more than 30% in the future.
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05
Low Temperature Coefficient
The power temperature coefficients of HJT cells are typically -0.25 to 0.2%/°C, lower than those of conventional and PERC cells.
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06
High Double-sided Ratio
The double-sided ratio of HJT can reach more than 90% (the highest can reach 98%); PERC bifacial has a double-sided ratio of only 75%+.
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07
Ultra-low Carbon Emissions
We have achieved a carbon footprint of less than 390g/W for the production of HJT module through the introduction of thinner wafer, low temperature and streamlined manufacturing processes.
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08
Thinner Silicon Wafers
The HJT cells can be applied to 100 μm silicon wafers, and the ultra-thin HJT cells can also be superimposed with 0BB and imbricate technology to further cost reducation and efficiency improvement.
